Effect of C and N Addition on Thermoelectric Properties of TiNiSn Half-Heusler Compounds

Enhanced thermoelectric performance in TiNiSn-based half-Heuslers.

Thermoelectric figures of merit, ZT > 0.5, have been obtained in arc-melted TiNiSn-based ingots. This promising conversion efficiency is due to a low lattice thermal conductivity, which is attributed to excess nickel in the half-Heusler structure.

Enhanced Ideal Strength in the Thermoelectric Half-Heusler TiNiSn by Sub-Structure Engineering

Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys

Half-Heusler alloys with the general formula TiNiSn12xSbx are currently being investigated for their potential as thermoelectric ~TE! materials. A systematic investigation of the effect of Sb doping on the Sn site and Zr doping on the Ti site on the electrical and thermal transport of the TiNiSn system has been performed. Unexpectedly, lattice thermal conductivity kL appears to increase somewha...

Resolving the true band gap of ZrNiSn half-Heusler thermoelectric materials

Band structure parameters, such as the band gap, can be estimated using electrical transport properties. In many thermoelectric studies, the temperature dependent Seebeck coefficient is used to estimate the band gap using the Goldsmid–Sharp band gap formula: Eg 1⁄4 2eSmaxTmax. This important, fundamental parameter is useful for characterizing and understanding any semiconductor, but it is parti...

Enhanced ideal strength of thermoelectric half-Heusler TiNiSn by sub-structure engineering

State Key Laboratory of Advanced Technolo Wuhan University of Technology, Wuhan 43 cn Department of Materials Science and Engine Illinois 60208, USA. E-mail: jeff.snyder@no Materials and Process Simulation Cent Pasadena, California 91125, USA Materials Science and Engineering, Universi USA ITMO University, St. Petersburg, Russia † Electronic supplementary informa 10.1039/c6ta04123j Cite this: J...